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| DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. PACKAGE DIMENSIONS in millimeters (inches) 5.2 MAX. (0.204 MAX.) FEATURES * Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz * High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 0.5 (0.02) 1.77 MAX. (0.069 MAX.) 5.5 MAX. (0.216 MAX.) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 65 20 12 3.0 100 600 150 to +150 V V V mA mW C C 1.27 (0.05) 2.54 (0.1) 1 2 3 1. Base 2. Emitter 3. Collector EIAJ : SC-43B JEDEC : TO-92 IEC : PA33 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Insertion Power Gain Noise Figure Noise Figure SYMBOL ICBO IEBO hFE fT Cob 50 120 6.5 0.65 2 MIN. TYP. MAX. 1.0 1.0 300 UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 mA A A GHz 1.0 pF dB dB 3.0 dB VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz VCE = 10 V, IC = 40 mA, f = 1.0 GHz S21e NF NF 9.5 1.1 1.8 hFE Classification Class Marking hFE K K 50 to 300 Document No. P10355EJ3V1DS00 (3rd edition) Date Published March 1997 N Printed in Japan (c) 4.2 MAX. (0.165 MAX.) 14 MIN. (0.551 MIN.) 1985 2SC3355 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2 f = 1.0 MHz PT-Total Power Dissipation-mW heat sink 19 With heat sink 10 1000 Cre-Feed-back Capacitance-pF 3.8 1 500 Free air 7.8 0.5 0 50 100 150 0.3 0 0.5 1 2 5 10 VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT 15 VCE = 10 V f = 1.0 GHz 20 30 TA-Ambient Temperature-C DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V |S21e|2-Insertion Gain-dB hFE-DC Current Gain 100 10 50 5 20 10 0.5 1 5 10 50 0 0.5 1 5 10 50 70 IC-Collector Current-mA GAIN BANDWIDTH PROUDCT vs. COLLECTOR CURRENT 10 IC-Collector Current-mA INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax fT-Gain Bandwidth Product-GHz 5.0 20 Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB 3.0 2.0 1.0 0.5 0.3 0.2 VCE = 10 V 0.1 0 0.5 10 5.0 10 30 IC-Collector Current-mA |S21e|2 10 VCE = 10 V IC = 20 mA 0 0.1 0.2 0.4 0.6 0.8 10 2 f-Frequency-GHz 2 2SC3355 NOISE FIGURE vs. COLLECTOR CURRENT 7 6 VCE = 10 V f = 1.0 GHz -80 INTERMODULATIOn DISTORTION vs. COLLECTOR CURRENT NF-Noise Figure-dB 5 4 -70 IM3 IM2, IM3 (dB) 3 2 1 0 0.5 -60 IM2 -50 1 5 10 50 70 -40 IC-Collector Current-mA VCE = 10 V at V0 + 100 dB V/50 Rg = Re = 50 IM2 f = 90 + 100 MHz IM3 f = 2 x 200 - 190 MHz 20 30 40 50 60 70 IC-Collector Current-mA -30 S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.173 0.054 0.013 0.028 0.062 0.091 0.121 0.148 0.171 0.207 S11 80.3 77.0 57.9 81.8 82.2 80.7 80.2 80.1 80.0 79.9 S21 13.652 7.217 4.936 3.761 3.094 2.728 2.321 2.183 1.892 1.814 S21 103.4 85.1 74.0 62.3 58.3 52.9 44.9 36.4 30.2 21.4 S12 0.041 0.066 0.113 0.144 0.183 0.215 0.240 0.288 0.305 0.344 S12 73.8 71.2 69.3 67.0 64.7 61.7 58.7 50.7 46.8 39.1 S22 0.453 0.427 0.428 0.414 0.392 0.377 0.359 0.354 0.345 0.344 S22 21.8 26.0 30.8 37.2 43.2 51.4 58.3 67.2 80.0 90.4 VCE = 10 V, IC = 40 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.011 0.028 0.027 0.043 0.074 0.098 0.120 0.146 0.171 0.205 S11 60.1 42.9 25.1 65.7 75.1 75.6 74.1 75.8 77.2 78.0 S21 13.76 7.338 4.996 3.801 3.134 2.759 2.351 2.203 1.910 1.825 S21 105.4 82.9 72.7 61.9 57.6 52.4 44.4 36.0 29.9 21.3 S12 0.040 0.069 0.114 0.144 0.183 0.221 0.247 0.291 0.299 0.344 S12 73.3 66.7 69.4 67.8 63.4 62.1 55.7 49.6 46.0 39.4 S22 0.421 0.416 0.414 0.406 0.386 0.373 0.356 0.347 0.342 0.335 S22 17.5 22.8 28.7 35.7 41.8 49.8 56.3 66.6 78.8 89.6 3 2SC3355 S-PARAMETER S11e, S22e-FREQUENCY CONDITION VCE = 10 V 8 0.0 2 0.4 0.9 1.0 0.8 1.2 9 0.0 1 0.4 0.10 0.40 110 0.7 0.11 0.39 100 0.12 0.38 0.13 0.37 90 0.14 0.36 80 0.15 0.35 70 1.4 0.1 6 0.3 4 0.6 0. THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 D LOAD AR 0.4 0.0TOR 3 HS TOWLE OF REFLECTION COEFFCIENT IN 6 7 DEG 0.0 T ANG 4 G 0.4 REE 0.4 LEN 60 0 S .04 VE -1 6 0 .0 A 0W 5 15 0.4 5 0.4 5 50 0 -1 .0 5 0 0. 0 44 POS 0.1 14 0.4 6 0. 06 40 ENT ITIV ON 0 ER 4 MP 0. -1 EA CO 5 0. 07 43 0. 0 13 1.6 12 0 6 00 1.8 0.1 0.3 7 3 0. 2.0 0.2 50 0. 18 32 19 0. 31 0. ( -Z-+-J-XTANCE CO ) MPO N T EN 0.4 0 0.2 0 0.3 40 C O WAVELEN G 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 0.1 0.6 0 0.2 0. 8 IC = 20 mA 4.0 1. E NC TA X - AC -J -O RE --Z ) 0.3 ( 0. 4 E IV AT 0. 5 2.0 0.6 1.8 1.6 0.7 0.8 1.4 0.9 1.2 1.0 S21e-FREQUENCY CONDITION 90 VCE = 10 V IC = 40 mA S12e-FREQUENCY CONDITION 90 120 0.2 GHz 60 120 150 S21e 30 150 S12e 2.0 GHz 2.0 GHz 180 4 8 12 16 20 0 180 0.2 GHz 0.1 0.2 0.3 0.4 0.5 -150 -30 -150 -120 -90 -60 -120 -90 4 3. 0 0. 32 0. 18 -5 0 3 0.3 7 0.1 -6 4 0.3 6 0.1 0 0.35 0.15 -70 0.36 0.14 -80 1.0 2.0 GHz 0.8 0.6 S22e VCE = 10 V IC = 40 mA 20 50 REACTANCE COMPONENT R ---- 0.2 ZO ( ) 10 5.0 0.37 0.13 0.4 0.2 0.2 IC = 20 mA IC = 40 mA IC = 40 mA 0.2 GHz 0.4 0.2 GHz 0.8 0.6 S11e 2.0 GHz 0.4 0 1. -90 0.38 0.12 0.39 0.11 -100 0.40 0.10 -11 0 0.4 1 0.0 0.4 9 02 -1 .08 20 NE G -1 0. 4 0. 3 07 30 0. 4 0.6 3. 0.8 0 1 0.2 9 0.2 30 0.3 4.0 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 1.0 6.0 0.2 10 0.1 20 50 0.25 0.25 0 0.26 0.24 -10 0.27 0.23 0.2 2 -20 0.2 8 0.2 9 0.2 1 0.3 -3 0.2 0 0 0 -4 0 0. 0. 31 19 60 30 0 -30 -60 2SC3355 [MEMO] 5 2SC3355 [MEMO] 6 2SC3355 [MEMO] 7 2SC3355 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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